The formation of soap bubbles from thin films is accompanied by topological transitions. Here we show how a magnetic topological structure, a skyrmion bubble, can be generated in a solid-state system in a similar manner. Using an inhomogeneous in-plane current in a system with broken inversion symmetry, we experimentally "blow" magnetic skyrmion bubbles from a geometrical constriction. The presence of a spatially divergent spin-orbit torque gives rise to instabilities of the magnetic domain structures that are reminiscent of Rayleigh-Plateau instabilities in fluid flows. We determine a phase diagram for skyrmion formation and reveal the efficient manipulation of these dynamically created skyrmions, including depinning and motion. The demonstrated current-driven transformation from stripe domains to magnetic skyrmion bubbles could lead to progress in skyrmion-based spintronics.

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) in an electric-current carrying conductor under the influence of perpendicular magnetic fields, as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge 1-4 , show related transverse motion. Chiral magnetic skyrmions with a well-defined spin topology resulting in a unit topological charge serve as good candidates to test this hypothesis 1-3,5-11 . In spite of the recent progress made on investigating magnetic skyrmions 2,4,6-8,12-19 , direct observation of the skyrmion Hall effect in real space has, remained elusive. Here, by using a current-induced spin Hall spin torque 13,20-23 , we experimentally observe the skyrmion Hall effect by driving skyrmions from creep motion into the steady flow motion regime. We observe a Hall angle for the magnetic skyrmion motion as large as 𝟏𝟓 ∘ for current densities smaller than 𝟏𝟎 𝟕 𝐀/𝐜𝐦 𝟐 at room temperature. The experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities for the emerging field of skyrmionics, including novel applications such as topological selection.Because of their topologically non-trivial spin textures, chiral magnetic skyrmions enable many intriguing phenomena based on their topology 2-4 , such as emergent electrodynamics 10 and effective magnetic monopoles 11 . As compared to most (vortex-like) Bloch skyrmions in bulk chiral materials 2,5,9 , utilizing interfacial inversion symmetry breaking 24 in heavy metal/ultrathin ferromagnet/insulator hetero-structures has enabled

Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 10(4) A cm(-2) at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.

Breaking of structural symmetries of nanomagnetic systems is of great interest for the development of ultralow-power spintronic devices. The structural asymmetry in various magnetic heterostructures has been engineered to reveal novel fundamental interactions between electric currents and magnetization, resulting in spin-orbit-torques (SOTs) on the magnetization [1][2][3][4][5][6] , which are both fundamentally important and technologically promising for device applications. Such SOTs have been used to realize current-induced magnetization switching [2][3][4]7 and domain-wall 3 motion [8][9][10] in recent experiments. Typical heterostructures exhibiting SOTs consist of a ferromagnet (F) with a heavy nonmagnetic metal (NM) having strong spin-orbit coupling on one side, and an insulator (I) on the other side (referred to as NM/F/I structures, shown schematically in Fig. 1a, which break mirror symmetry in the growth direction). In terms of device applications, the use of SOTs in NM/F/I structures allows for a significantly lower write current compared to regular spin-transfer-torque (STT) devices 4 . It can greatly improve energy efficiency and scalability [1][2][3][4][5]11 for new SOT-based devices such as magnetic random access memory (SOT-MRAM), going beyond state-of-the-art STT-MRAM.For practical applications, a critical requirement to achieve high-density SOT memory is the ability to perform SOT-induced switching without the use of external magnetic fields, in particular for perpendicularly-magnetized ferromagnets, which show better scalability and thermal stability as compared to the in-plane case 12 .However, there are currently no practical solutions that meet this requirement. In NM/F/I heterostructures studied so far, the form of the resultant current-induced SOT alone does not allow for deterministic switching of a perpendicular ferromagnet, requiring application of an additional external in-plane magnetic field to switch the perpendicular magnetization [2][3][4] . (This is a very general feature of SOT devices, which can be explained by symmetry-based arguments, as discussed below). In such experiments, the external field allows for each current direction to favor a particular orientation for the out-of-plane component of magnetization, thereby resulting in deterministic perpendicular switching. However, this external field is undesirable 4 from a practical point of view. For device applications, it also reduces the thermal stability of the perpendicular magnet by lowering the zero-current energy barrier between the stable perpendicular states, resulting in a shorter retention time if used for memory.This work provides a solution to eliminate the use of external magnetic fields, bringing SOT-based spintronic devices such as SOT-MRAM closer to practical application. We present a new NM/F/I structure, which provides a novel spin-orbit torque, resulting in zero-field current-induced switching of perpendicular magnetization. Our device consists of a stack of Ta/Co 20 Fe 60 B 20 /TaO x layers, but also has a...