In this work  solid state dye sensitized solar cell (SSDSSC) type  (ITO / TiO2/ Ru / CuI / Ag) is fabricated. The thin films are prepared by pulse laser deposition (PLD) technique under the vacuum pressure of 3×10−3 mbar and annelid at 450 oC. In this technique  Nd:YAG laser at 1064 nm wavelength with (200 , 500 , 800) pulsed was used. It was noticed from (I-V) characteristics of the solar cell that  the photocurrent  collected  from  the  TiO2  (NP)  is increase as the number of  laser pulses increase. The conversion efficiency of TiO2 is increased  from 2.115%  up  to  5.654% and for CuI from 1.73 % to 5.19 % when the number of pulses increase from 200 up to 800.

In this paper , Copper(I) Iodide (CuI) thin films were prepared by Pulsed Laser Deposition (PLD).The effect of different No. of laser pulse (200,500 and 800) on the structural and electrical properties were studied . The structure of all CuI films is tested using X-ray diffraction (XRD) the results were found to be polycrystalline of hexagonal structure with strong crystalline orientation at (111)plane. D.C measurements revealed that the electrical activation energy (Ea) decreases with increasing of pulse shoot of thin films. The Hall effect measurements confirmed that the CuI are Ptype and the charge carriers concentration (n) were increased with increasing of pulse shoots .Also, it can observe that Hall mobility ( H ) decreases with the increasing of pulse shoot for films.