The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of x2.9 BTBT in the < 112 > direction, as compared with Si < 110 > / (100) due to a small band gap. In addition, the high ON/OFF current ratio, with an ON current similar to 1 mu A/mu m and an OFF current similar to 10 pA/mu m, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass

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