Three composites based on cyanate (CE) resin, aluminum nitride (AlN), surface‐treated aluminum nitride [AlN(KH560)], and silicon dioxide (SiO2) for microelectronic packaging, coded as AlN/CE, AlN(KH560)‐SiO2(KH560)/CE, and AlN‐SiO2/CE composite, respectively, were developed for the first time. The thermal conductivity and dielectric constant of all composites were investigated in detail. Results show that properties of fillers in composites have great influence on the thermal conductivity and dielectric constant of composites. Surface treatment of fillers is beneficial to increase the thermal conductivity or reduce dielectric constant of the composites. Comparing with binary composite, when the filler content is high, ternary composites possess lower thermal conductivity and dielectric constant. The reasons leading to these outcomes are discussed intensively. POLYM. COMPOS., 2010. © 2009 Society of Plastics Engineers

Viscoelastic ature is one of the key features of polymeric composites. A series of cyanate ester (CE)‐based composites with different aluminum nitride (AlN) contents for high performance electronic packaging, coded as AlN/CE, were developed; the viscoelastic nature of AlN/CE composites was intensively investigated by employing dynamic mechanical analysis (DMA). Results show that the AlN content has a great effect on dynamic mechanical properties of AlN/CE composites. The storage modulus in the glassy region increases linearly with the addition of AlN as well as the increase of AlN content. Meanwhile, all composites also exhibit notably higher loss modulus than cured CE resin due to the appearance of new energy dissipation forms. In addition, the incorporation of AlN has a significant effect on damping factor peak. All reasons leading to these phenomena are analyzed from the view of structure–property relationship. Copyright © 2009 John Wiley & Sons, Ltd.

This paper presents the design, simulation, and measurement of an asymmetric triple-band metamaterial composed of single geometry electric field coupled resonators in the terahertz region. Theoretical and experimental results show that the structure has three distinct and strong absorption frequency peaks near 0.38, 0.58, and 0.74 THz, all of which are related to the inductance-capacitance resonance of the metamaterial. Due to the well-separating of different resonances in the particle, this metamaterial shows potentially application promises in the design of multiband terahertz devices.

Metamaterials are artificially structured electromagnetic materials which can lead to the realization of phenomena that cannot be obtained with natural materials. In the terahertz frequency regime, metamaterials have distinguished performance and open up a new way to design and construct the functional devices. Based on the structure of metamaterials, planar symmetric normal and complementary threeresonance resonators in Terahertz band are proposed in this paper. Simulation and experimental study have been carried out. The results show that the proposed structure has three distinct and strong resonant bands in THz regime and that symmetric normal structure and complementary structure can realize the three stop-resonances and pass-resonances respectively. For the well-separating of different resonances in the terahertz band, these symmetric three-passband and three-stopband resonators will be used in the design of multiband terahertz devices.