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The deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ∼18, ∼35, and ∼70 meV, which are respectively associated with the Si shallow donors, O impurities, and the nitrogen vacancies (VN). DLTS measurements, on the other hand, reveal trap levels at Ec−0.1 eV, Ec−(0.2–0.24) eV, and Ev+0.87 eV. The trap level at Ec−0.1 eV obtained from DLTS can be correlated to the 70 meV deep donor (VN) obtained from Hall measurements. The deep donor band at Ec−(0.2–0.24) eV is attributed to the ON related defect complex decorated along dislocation sites while the hole level at Ev+0.87 eV is attributed to the Ga vacancy (VGa). Thermal annealing at 750 °C in nitrogen ambient results in reduction of yellow luminescence, which could be due to decrease in the concentration of VN and ON-related defect complexes. From these observations, we propose that yellow luminescence in GaN arises from the transitions from the Ec−(0.2–0.24) eV levels to the deep level at Ev+0.87 eV.

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Micro-bends are frequently encountered in micro-electro-mechanical systems (MEMS) as a basic unit of complex geometry. It is essential for a deep understanding of the rarefied gas flow through bent channel. In this paper, a two-dimensional pressure-driven gas flow in a micro-channel with two bends is investigated by solving the Bhatnagar-Gross-Krook kinetic equation via the discrete velocity method in the slip and transition flow regimes. The results show that the mass flow rate (MFR) through the bent channel is slightly higher than that in the straight channel in the slip flow regime but drops significantly as the Knudsen number increases further. It is demonstrated that the increase of MFR is not due to the rarefaction effect but to the increase in cross-section of the bent corners. As the rarefaction effect becomes more prominent, the low-velocity zones at the corners expand and the gas flow is "squeezed" into the inner corner. The narrowed flow section is similar to the throttling effect caused by the valve, and both the changes in MFRs and the pressure distribution also confirm this effect. The classical Knudsen minimum changes due to this "rarefaction throttling effect". The Knudsen number at which the minimum MFR occurs gradually increases with the bend angle, and finally disappears in the transition flow regime. In addition, the onset of rarefaction throttling effect shifts to a smaller Knudsen number with a lower tangential momentum accommodation coefficient.