Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1-2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal contacts to these 2D crystals is a fundamental challenge, which is not adequately addressed at present. In this paper, we report a systematic study of metal-mTMD contacts with different geometries (top contacts and edge contacts) by ab initio density-functional theory calculations, integrated with Mulliken population analysis and a semiempirical van der Waals dispersion potential model (which is critical for 2D materials and not well treated before). Particularly, In, Ti, Au, and Pd, contacts to monolayer MoS 2 and WSe 2 as well as Mo-MoS 2 and W-WSe 2 contacts are evaluated and categorized, based on their tunnel barriers, Schottky barriers, and orbital overlaps. Moreover, going beyond Schottky theory, new physics in such contact interfaces is revealed, such as the metallization of mTMDs and abnormal Fermi level pinning. Among the top contacts to MoS 2 , Ti and Mo show great potential to form favorable top contacts, which are both n-type contacts, while for top contacts to WSe 2 , W or Pd exhibits the most advantages as an n-or p-type contact, respectively. Moreover, we find that edge contacts can be highly advantageous compared to top contacts in terms of electron injection efficiency. Our formalism and the results provide guidelines that would be invaluable for designing novel 2D semiconductor devices.

Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. While the low sensitivity of FET biosensors based on bulk 3D structures has been overcome by using 1D structures (nanotubes/nanowires), the latter face severe fabrication challenges, impairing their practical applications. In this paper, we introduce and demonstrate FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure. A MoS2-based pH sensor achieving sensitivity as high as 713 for a pH change by 1 unit along with efficient operation over a wide pH range (3-9) is demonstrated. Ultrasensitive and specific protein sensing is also achieved with a sensitivity of 196 even at 100 femtomolar concentration. While graphene is also a 2D material, we show here that it cannot compete with a MoS2-based FET biosensor, which surpasses the sensitivity of that based on graphene by more than 74-fold. Moreover, we establish through theoretical analysis that MoS2 is greatly advantageous for biosensor device scaling without compromising its sensitivity, which is beneficial for single molecular detection. Furthermore, MoS2, with its highly flexible and transparent nature, can offer new opportunities in advanced diagnostics and medical prostheses. This unique fusion of desirable properties makes MoS2 a highly potential candidate for next-generation low-cost biosensors.

This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayer WSe2. Device measurements supported by ab initio density functional theory (DFT) calculations indicate that the d-orbitals of the contact metal play a key role in forming low resistance ohmic contacts with monolayer WSe2. On the basis of this understanding, indium (In) leads to small ohmic contact resistance with WSe2 and consequently, back-gated In-WSe2 FETs attained a record ON-current of 210 μA/μm, which is the highest value achieved in any monolayer transition-metal dichalcogenide- (TMD) based FET to date. An electron mobility of 142 cm(2)/V·s (with an ON/OFF current ratio exceeding 10(6)) is also achieved with In-WSe2 FETs at room temperature. This is the highest electron mobility reported for any back gated monolayer TMD material till date. The performance of n-type monolayer WSe2 FET was further improved by Al2O3 deposition on top of WSe2 to suppress the Coulomb scattering. Under the high-κ dielectric environment, electron mobility of Ag-WSe2 FET reached ~202 cm(2)/V·s with an ON/OFF ratio of over 10(6) and a high ON-current of 205 μA/μm. In tandem with a recent report of p-type monolayer WSe2 FET ( Fang , H . et al. Nano Lett. 2012 , 12 , ( 7 ), 3788 - 3792 ), this demonstration of a high-performance n-type monolayer WSe2 FET corroborates the superb potential of WSe2 for complementary digital logic applications.

The fast growth of information technology has been sustained by continuous scaling down of the silicon-based metal-oxide field-effect transistor. However, such technology faces two major challenges to further scaling. First, the device electrostatics (the ability of the transistor's gate electrode to control its channel potential) are degraded when the channel length is decreased, using conventional bulk materials such as silicon as the channel. Recently, two-dimensional semiconducting materials have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing. To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling. Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature. By using highly doped germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterostructure is built with excellent electrostatics, a strain-free heterointerface, a low tunnelling barrier, and a large tunnelling area. Our atomically thin and layered semiconducting-channel tunnel-FET (ATLAS-TFET) is the only planar architecture tunnel-FET to achieve subthermionic subthreshold swing over four decades of drain current, as recommended in ref. 17, and is also the only tunnel-FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our device is at present the thinnest-channel subthermionic transistor, and has the potential to open up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive biosensors and gas sensors.

High-energy all-solid-state lithium (Li) batteries have great potential as next-generation energy storage devices. Among all choices of electrolytes, polymer-based systems have attracted wide-spread attention due to their low density, low cost, and excellent processability. However, they are generally mechanically too weak to effectively suppress Li dendrites and have lower ionic conductivity for reasonable kinetics at ambient temperature.Herein, an ultra-strong reinforced composite polymer electrolyte (CPE) has been successfully designed and fabricated by introducing a stiff mesoporous SiO 2 aerogel as the backbone for a polymer-based electrolyte. The interconnected SiO 2 aerogel not only perform as a strong backbone strengthening the whole composite, but also offer large and continuous surfaces for strong anion adsorption, which produces a highly-conductive pathway across the composite.As a consequence, a high modulus of ~0.43 GPa and high ionic conductivity of ~0.6 mS cm -1