Scanning electron microscopy has been developed for topographic analysis at the nanometer scale. Herein, we present a silicon p-n diode with multi-annular configuration to detect backscattering electrons (BSE) in a homemade desktop scanning electron microscope (SEM). The multi-annular configuration enables the enhancement of the topography contrast of 82.11 nA/μm as compared with the commercial multi-fan-shaped BSE detector of 40.08 nA/μm. Additionally, we integrated it with lateral p-n junction processing and aluminum grid structure to increase the sensitivity and efficiency of the multi-annular BSE detector that gives higher sensitivity of atomic number contrast and better surface topography contrast of BSE images for low-energy detection. The responsivity data also shows that MA-AL and MA p-n detectors have higher gain value than the MA detector does. The standard deviation of measurements is no higher than 1%. These results verify that MA p-n and MA-AL detectors are stable and can function well in SEM for low-energy applications. It is demonstrated that the multi-annular (MA) detectors are well suited for imaging in SEM systems.

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A novel silicon strip detector has been developed that has the necessary properties to provide two-dimensional position sensitivity with a moderate number of readouts and single-sided detector fabrication process. The concept is based on segmented pixel electrodes arranged in a projective X-Y readouts, it combines the 2-D position resolution of pixel electrode geometry with the simplicity of the projective readout of a double-sided strip detector. And also with proper segmentation of strip electrodes, the multi-hits induced ghost image problem can be resolved.

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