A kinematic (geometrical) diffraction simulation model has been developed to provide understanding of direct dislocation images on synchrotron white‐beam X‐ray topographs, and has been successfully applied to illustrate the contrast formation mechanisms involved in images of micropipe‐related superscrew dislocations in silicon carbide crystals. The coincidence of the simulations with the contrast features of the superscrew dislocation images, recorded using a series of synchrotron topography techniques, shows that this model is capable of revealing the detailed diffraction behavior of the highly distorted region around the dislocation core and determining the quantitative characteristics of the dislocations. The simulation technique is thus demonstrated to be a simple but efficient method for interpretation of synchrotron topographs, and may be applied to explain the topographic contrast characters of general crystal defects.

No abstract

Quantum transport in disordered systems is studied using a polaron-based master equation. The polaron approach is capable of bridging the results from the coherent band-like transport regime governed by the Redfield equation to incoherent hopping transport in the classical regime. A non-monotonic dependence of the diffusion coefficient is observed both as a function of temperature and system-phonon coupling strength. In the band-like transport regime, the diffusion coefficient is shown to be linearly proportional to the system-phonon coupling strength and vanishes at zero coupling due to Anderson localization. In the opposite classical hopping regime, we correctly recover the dynamics described by the Fermi's Golden Rule and establish that the scaling of the diffusion coefficient depends on the phonon bath relaxation time. In both the hopping and band-like transport regimes, it is demonstrated that at low temperature, the zero-point fluctuations of the bath lead to non-zero transport rates and hence a finite diffusion constant. Application to rubrene and other organic semiconductor materials shows a good agreement with experimental mobility data. C 2015 AIP Publishing LLC. [http://dx.

Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from (0001), as well as (1 100) and (112 0) oriented substrates were used. For epilayers grown on substrates misoriented by 3.5 ~ from (0001) toward <1120>, the triangular inclusions were identified as consisting of two 3C-SiC structural configurations which are related to each other by a 180 ~ rotation about the [111] axis. The epitaxial relationships between the 3C inclusions and the 4H-SiC epilayers (or substrates) were also determined. No evidence was found for the nucleation of 3C-SiC inclusions at superscrew dislocations (along the [0001] axis) in the 4H-SiC substrates. Increasing the offaxis angle of the substrates from 3.5 to 6.5 ~ was found to greatly suppress the formation of the triangular inclusions. In the case of substrates misoriented by 8.0 ~ from (0001) toward <1120>, the triangular inclusions were virtually eliminated. The crystalline quality of 4H-SiC epilayers grown on the substrates misoriented by 8.0 ~ from (0001) was very good. For the (1100) and (1120) samples, there is no indication of 3C-SiC inclusions in the epilayers. Possible formation mechanisms and the morphology of 3C-SiC inclusions are discussed.