The transformation of a normal cell into a cancer cell has been correlated with alterations in gene regulation and protein expression. To identify altered proteins and link them to the tumorigenesis of breast cancer, we have distinguished normal breast cells (MCF-10A) from noninvasive breast cancer cells (MCF-7) and invasive breast cancer cells (MB-MDA-231) to identify potential breast cancer markers in transformed breast cells. Using the 2D-DIGE and MALDI-TOF MS techniques, we quantified and identified differentially expressed extracellular secreted proteins and total cellular proteins across MCF-7, MB-MDA-231 and MCF-10A. The proteomic analysis of the secreted proteins identified 50 unique differentially expressed proteins from three different media. In addition, 133 unique differentially expressed proteins from total cellular proteins were also identified. Note that 14 of the secreted proteins and 51 of the total cellular proteins have not been previously reported in breast cancer research. Some of these unreported proteins have been examined in other breast cancer cell lines and have shown positive correlations with 2D-DIGE data. In summary, this study identifies numerous putative breast cancer markers from various stages of breast cancer. The results of this study may aid in developing proteins identified as useful diagnostic and therapeutic candidates in research on cancer and proteomics.

An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg<VFB, the intrinsic graphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.