The molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

Sensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the ozone hole. In this paper, a solar-blind UV photodetector based on a buried-gate graphene field-effect transistor (GFET) decorated with titanium dioxide (TiO2) nanoparticles (NPs) was demonstrated. Under the illumination of a 325-nm laser (spot size ~2 μm) with a total power of 0.35 μW, a photoresponsivity as high as 118.3 A/W was obtained, at the conditions of zero gate bias and a source-drain bias voltage of 0.2 V. This photoresponsivity is over 600 times higher than that of a recently reported solar-blind UV photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A/W). Experiments showed that the photoresponsivity of the TiO2 NPs decorated GFET photodetectors can be further enhanced by increasing the source-drain bias voltage or properly tuning the gate bias voltage. Furthermore, the photoresponse time of the TiO2 NPs decorated GFET photodetectors can also be tuned by the source-drain bias and gate bias. This study paves a simple and feasible way to fabricate highly sensitive, cost-efficient, and integrable solar-blind UV photodetectors.

Three-dimensional graphene FETs decorated with TiO2 nanoparticles are used as high-sensitivity ultraviolet photodetectors with tunable responsivity and response time.

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A novel three-dimensional (3D) microtubular NO2 field effect transistor (FET) sensor has been fabricated from 2D reduced graphene oxide (rGO) nanosheets decorated with Ag nanoparticles, by applying the self-roll-up technique. The electrical properties of 2D and 3D Ag NP/rGO FET sensors have been investigated and compared. Finally, the performance of the 3D sensors has been demonstrated, where the preliminary results show that our 3D Ag NP/rGO FET NO2 sensor exhibits a relatively fast response (response time of 116 s) to 20 parts per million NO2 with a response of 4.92% at room temperature at zero bias voltage and 2 V source–drain bias voltage. Moreover, characteristics of our 3D Ag NP/rGO FET sensors, e.g. response, response and recovery times, have been demonstrated to be tuned by adjusting the applied source–drain and gate biases. Compared to the 2D geometry, our 3D geometry occupies less device area, but with the same sensing area. This study provides a new way to optimize sensing device performance, and promotes its development for miniaturized and integrated gas-sensing applications for indoor health and safety detection, outdoor environmental monitoring, industrial pollution monitoring and beyond.