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The short carrier diffusion length, the trade-off between sufficient light absorption and efficient charge separation of BiVO4 photoelectrode often leads to poor photoelectrochemical (PEC) degradation performance. In this paper, we firstly designed a method of combining oxygen vacancies (Ov) with cocatalyst FeOOH for synergistic improve BiVO4 PEC degradation performance. After introducing Ov resulted from hydrothermal method, the photocurrent density value reaches 0.54 mA/cm2 at 1.23 V vs. RHE by the enhanced of carrier density and the broaden of light absorption, 1.38 times higher than that of pure BiVO4 (0.39 mA/cm2 at 1.23 V vs. RHE). As expected, the as-synthesized BiVO4-Ov/FeOOH exhibits enhanced stability and a remarkable photocurrent density of 1.18 mA cm2 at 1.23 V vs. RHE under AM 1.5G illumination. In addition, a significant PEC degradation performance of 85% were reached, which is about 1.7 times than BiVO4-Ov. The results demonstrate that the Ovs can be effectively preserved by the coating of a thin FeOOH layer, leading to a photoelectrode of enhanced photocurrent and stability.

In this study, dielectric elastomers offering intrinsically good integrated performances are achieved by introducing AlN particles grafted with γ-methacryloxypropyl trimethoxy silane (KH570). The C=C of KH570 participated in the vulcanization of NR, which could increase the dispersions and interfacial interactions. By incorporating 10 phr AlN-KH570 fillers, the dielectric and mechanical properties of the composite are increased compared with the pristine DEA, and the breakdown strength remains above 93.9 kV/mm. Correspondingly, the actuation strain of 10 phr AlN-KH570/NR composite is 7 times higher than that of pristine DEA under the same driving voltage. Consequently, the AlN particles developed here are promising candidates as dielectric in actuators, and their excellent electromechanical properties could be applied in future industrial applications of DEs.

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