In this study, high-current and low-energy (400 eV) ion implantation and low-temperature microwave annealing were employed to achieve ultra shallow junctions. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (2400 W; ∼500 °C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a 600 W (∼250 °C) microwave was used to achieve low sheet resistance. The device subjected to two-step microwave annealing at 2400 W for 300 s + 600 W for 600 s has the lowest V th. It also has the lowest subthreshold swing (SS), which means that it has the highest cap ability to control sub threshold current. In these three devices, the largest I on/I off ratio is 2.203 × 106, and the smallest I on/I off ratio is 2.024 × 106.

The effect of MnCO 3 doping from 0 to 55 mol % into BaO-(Nd 0:7 Sm 0:3 ) 2 O 3 -4TiO 2 (BNST) sintered in a reducing atmosphere on the phase transformation, microstructure and electrical properties was studied. The variation of d-spacing with Mn content can be divided into three regimes in this study. In regime (I), 0 to 5 mol % Mn-doped BNST, the d-spacing decreases successively until 5 mol % which is the maximum solubility, because Mn þ3 is incorporated into Ti þ4 -sites of BNST. In regime (II), 5 to 42 mol % Mn-doped BNST, the d-spacing remains constant and Mn 2 O 3 is precipitated because the amount of MnCO 3 doped is more than the solubility. In regime (III), 43 to 55 mol % Mn-doped BNST, the d-spacing is the same as BNST without MnCO 3 doping. Heavily doping MnCO 3 into BNST gives rise to two parallel reactions, forming two ternary systems, BaO-(Nd,Sm) 2 O 3 -TiO 2 and BaO-(Nd,Sm) 2 O 3 -Mn 2 O 3 . Mn-doped BNST sintered in a reducing atmosphere is in a semiconducing state in regimes (I) and (II), because the concentration of free electron is higher than that of the acceptors. In contrast, Mn-doped BNST in regime (III) sintered in a reducing atmosphere is in an insulating state because the concentration of the acceptors is higher than that of liberated free electron.

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In this article, a semilump filter was implemented by using low-temperature C-fired ceramic (LTCC) technology with hybrid dielectrics to miniaturize the size and to attain the promising electrical properties. In the multilayer architecture, the striplines (inductors) were realized on the low-K dielectric (K ¼ 7.8) and capacitors were realized on the high-K (K ¼ 27) dielectric. Capacitor implemented by high-permittivity dielectrics is shown to be very efficient in decreasing dimensions of semilump filter with low-permittivity dielectric. Inductor implemented by low-permittivity dielectric is shown to be enhanced the Q-factor of the resonators. The design of the novel semilump filter has been developed and the prototypes fabricated by using the LTCC technology with hybrid dielectrics. The results of prototype measurement agree very well with the simulation results. The investigation proves the capability of the LTCC technology with hybrid dielectrics that is able to effectively miniaturize the filter and still attain the promising electrical performance of filters.