In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.

A new direct parameter extraction method of small-signal equivalent circuit for radio frequency laterallydiffused Metal Oxide Semiconductor Field Effect Transistor (RF LDMOSFET) with Faraday shield biased in cut-off operation is presented in this paper. A series of analytical equations are derived for non-linear rational function fitting as well as linear regression to measured device frequency response characteristics. The method is successfully applied to a set of fabricated RF LDMOSFETs with different geometry scales. As a result, all of the cut-off small-signal equivalent circuit elements are determined. Validation of the extraction method is verified by good agreement between the simulation results and the corresponding measurement data. In addition, reasonable physical meaningfulness of the method is further demonstrated by characterizing the device geometrical dependences of the extracted gate-drain capacitance ( ) and drain-source capacitance ( ).