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Improving the thermal transport across interfaces is a necessary consideration for micro-and nanoelectronic devices and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. Two-dimensional transition-metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal−TMD electrical contact resistance, but the thermal properties of these interfaces are significantly less explored irrespective of their high importance in their electronic devices. We isolate individual islands of MoSe 2 grown by chemical vapor deposition using photolithography and correlate the 2D variation of TBC with optical microscope images of the MoSe 2 islands. We measure the 2D spatial variation of the TBC at metal−MoSe 2 −SiO 2 interfaces using a modified time-domain thermoreflectance (TDTR) technique, which requires much less time than full TDTR scans. The thermoreflectance signal at a single probe delay time is compared with a correlation curve, which enables us to estimate the change in the signal with respect to the TBC at the metal−MoSe 2 −SiO 2 interface as opposed to recording the decay of the thermoreflectance signal over delay times of several nanoseconds. The results show a higher TBC across the Ti−MoSe 2 −SiO 2 interface compared to Al−MoSe 2 − SiO 2 . An image-clustering method is developed to differentiate the TBC for different numbers of MoSe 2 layers, which reveals that the TBC in single-layer regions is higher than that in the bilayer. We perform traditional TDTR measurements over a range of delay times and verify that TBC is higher at the Ti−MoSe 2 −SiO 2 interface compared to Al−MoSe 2 −SiO 2 , highlighting the importance of the choice of metal for heat dissipation at electrical contacts in TMD devices.

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Optical connectivity, which has been widely deployed in today's datacenters and high-performance computing (HPC) systems, is a disruptive technological revolution to the IT industry in the new Millennium. In our journey to debut an Exascale supercomputer, a completely new computing concept, called memorydriven computing, was innovated recently. This new computing architecture brings challenges and opportunities for novel optical interconnect solutions. Here, we first discuss our strategy to develop appropriate optical link solutions for different data traffic scenarios in memory-driven HPCs. Then, we present detailed review on recent work to demonstrate fully photonics-electronicsintegrated single-and multi-wavelength directly modulated laser (DML) transmitters on silicon for the first time. Compact heterogeneous microring lasers and laser arrays were fabricated as photonic engines to work with a customized complementary metal-oxide semiconductor (CMOS) driver circuit. Microring lasers based on conventional quantum well and new quantum dot lasing medium were compared in the experiment. Thermal shunt and MOS capacitor structures were integrated into the lasers for effective thermal management and ultra low-energy tuning. It enables a