Perovskite interfaces critically influence the final performance of the photovoltaic devices. Optimizing them by reducing the defect densities or improving the contact with the charge transporting material is key to further enhance the efficiency and stability of perovskite solar cells. Inverted (p–i–n) devices can particularly benefit here, as evident from various successful attempts. However, every reported strategy is adapted to specific cell structures and compositions, affecting their robustness and applicability by other researchers. In this work, we present the universality of perovskite top surface post-treatment with ethylene­diammonium diiodide (EDAI2) for p–i–n devices. To prove it, we compare devices bearing perovskite films of different composition, i.e., Sn-, Pb-, and mixed Sn–Pb-based devices, achieving efficiencies of up to 11.4, 22.0, and 22.9%, respectively. A careful optimization of the EDAI2 thickness indicates a different tolerance for Pb- and Sn-based devices. The main benefit of this treatment is evident in the open-circuit voltage, with enhancements of up to 200 mV for some compositions. In addition, we prove that this treatment can be successfully applied by both wet (spin-coating) and dry (thermal evaporation) methods, regardless of the composition. The versatility of this treatment makes it highly appealing for industrial application, as it can be easily adapted to specific processing requirements. We present a detailed experimental protocol, aiming to provide the community with an easy, universal perovskite post-treatment method for reliably improving the device efficiency, highlighting the potential of interfaces for the field.

The power conversion efficiency of tin-based halide perovskite solar cells is limited by large photovoltage losses arising from the significant energy-level offset between the perovskite and the conventional electron transport material, fullerene C 60 . The fullerene derivative indene-C 60 bisadduct (ICBA) is a promising alternative to mitigate this drawback, owing to its superior energy level matching with most tin-based perovskites. However, the less finely controlled energy disorder of the ICBA films leads to the extension of its band tails that limits the photovoltage of the resultant devices and reduces the power conversion efficiency. Herein, we fabricate ICBA films with improved morphology and electrical properties by optimizing the choice of solvent and the annealing temperature. Energy disorder in the ICBA films is substantially reduced, as evidenced by the 22 meV smaller width of the electronic density of states. The resulting solar cells show open-circuit voltages of up to 1.01 V, one of the highest values reported so far for tin-based devices. Combined with surface passivation, this strategy enabled solar cells with efficiencies of up to 11.57%. Our work highlights the importance of controlling the properties of the electron transport material toward the development of efficient lead-free perovskite solar cells and demonstrates the potential of solvent engineering for efficient device processing.