Bulk heterojunction photovoltaic devices based on blends of a conjugated polymer poly[2-methoxy-5-(3‘,7‘-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO−PPV) as electron donor and crystalline ZnO nanoparticles (nc-ZnO) as electron acceptor have been studied. Composite nc-ZnO:MDMO−PPV films were cast from a common solvent mixture. Time-resolved pump−probe spectroscopy revealed that a photoinduced electron transfer from MDMO−PPV to nc-ZnO occurs in these blends on a sub-picosecond time scale and produces a long-lived (milliseconds) charge-separated state. The photovoltaic effect in devices, made by sandwiching the active nc-ZnO:MDMO−PPV layer between charge-selective electrodes, has been studied as a function of the ZnO concentration and the thickness of the layer. We also investigated changing the degree and type of mixing of the two components through the use of a surfactant for ZnO and by altering the size and shape of the nc-ZnO particles. Optimized devices have an estimated AM1.5 performance of 1.6% with incident photon to current conversion efficiencies up to 50%. Photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy have been used to gain insight in the morphology of these blends.

ZnO nanoparticles dispersed in a semiconducting polymer form the active layer of a solar cell (see Figure) that is able to convert up to 40 % of the incident photons at 500 nm into electrical current and has a power conversion efficiency of about 1.5 % in sunlight. Manufactured at low temperature using environmentally friendly materials, it represents a new step to ‘green electricity'.

Blends of nanocrystalline zinc oxide nanoparticles (nc‐ZnO) and regioregular poly(3‐hexylthiophene) (P3HT) processed from solution have been used to construct hybrid polymer–metal oxide bulk‐heterojunction solar cells. Thermal annealing of the spin‐cast films significantly improves the solar‐energy conversion efficiency of these hybrid solar cells to ∼ 0.9 %. Photoluminescence and photoinduced absorption spectroscopy demonstrate that charge‐carrier generation is not quantitative, because a fraction of P3HT appears not to be in contact with or in close proximity to ZnO. The coarse morphology of the films, also identified by tapping‐mode atomic force microscopy, likely limits the device performance.

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