We report here the fabrication of highly efficient and long-lasting quantum-dot light emitting diodes (QLEDs) by blending various alkali metal carbonate in magnesium (Mg) doped zinc oxide (ZnO) (MZO) electron transport layer (ETL). Alkali metal carbonates blending in MZO, X2CO3:MZO, control the band-gap, electrical properties, and thermal stability. This can therefore enhance the operational lifetime of QLEDs. It is found that the conductivity of X2CO3:MZO film can be controlled and the thermal stability of ETLs could be improved by X2CO3 blending in MZO. The inverted red QLEDs (R-QLEDs) with Cs2CO3:MZO, Rb2CO3:MZO, and K2CO3:MZO ETLs exhibited the operational lifetime of 407 h for the R-QLEDs with Cs2CO3:MZO, 620 h with Rb2CO3:MZO and 94 h with K2CO3:MZO ETLs at T95 with the initial luminance of 1000 cd/m2. Note that all red QLEDs showed the high brightness over 150,000 cd/m2 But, the R-QLEDs with Na2CO3:MZO and Li2CO3:MZO ETLs exhibited shorter operational lifetime and poor brightness than the R-QLED with pristine MZO ETL.

Flexible top‐emission organic light‐emitting diodes (TOLEDs) with a thin‐film encapsulation (TFE) are of increasing attention to improve the flexibility of foldable smartphone organic light‐emitting diode (OLED) displays. There are inevitable issues to achieve foldable display with smaller folding radius for the future portable display. Herein, the device flexibility is investigated with infolding and outfolding tests with the curvature radius from 2.5 to 0.32 mm. Parylene (1 μm)/silicon nitride (SiNx) (X nm)/parylene (1 μm)/SiNx (X nm) (X = 100, 70, 50, and 30 nm) of TFEs are applied on the TOLEDs. It is found that stable device performances can be achieved at the curvature radius of 0.32 mm after 100 000 cycles infolding testing when the SiNx thickness is 30 nm. The device has significant degradation upon outfolding of 5000 cycles at the same radius of 0.32 mm. Note that, the water vapor transmission rate (WVTR) of the TFT with 30 nm SiNx is higher than the TFE with thicker SiNx (e.g., 50 nm). The flexibility and WVTR can be much improved using four‐stacked TFE with 30 nm SiNx for foldable active‐matrix OLED displays.