Spin-orbit torque has attracted considerable attention as a means to overcome limits of devices based on spin-transfer torque. However, a small magnetic field that is collinear to the current flow must be applied to break symmetry and induce deterministic current-induced magnetization switching. Recently, a junction utilizing interlayer coupling mediated by a Ru spacer layer between two CoFe layers was designed for symmetry breaking and exhibited current-induced magnetization switching without a magnetic field. Here, we demonstrate zero-field current-induced switching of the perpendicular magnetization of a Co layer that is indirectly coupled with a CoFe layer via a Ta spacer. The weak interlayer coupling exhibited by Ta allows the layer thickness to be relatively small (≈0.5 nm), enabling appropriate interlayer coupling to induce spin-orbit torque for current-induced magnetic switching. External magnetic field effects on switching characteristics show that the current switching process is quite stable against external environments.

Spin-based electronic devices on polymer substrates have been intensively investigated because of several advantages in terms of weight, thickness, and flexibility, compared to rigid substrates. So far, most studies have focused on maintaining the functionality of devices with minimum degradation against mechanical deformation, as induced by stretching and bending of flexible devices. Here, we applied repetitive bending stress on a flexible magnetic layer and a spin-valve structure composed of Ta/NiFe/CoFe/Cu/Ni/IrMn/Ta on a polyimide (PI) substrate. It is found that the anisotropy can be enhanced or weakened depending upon the magnetostrictive properties under stress. In the flat state after bending, due to residual compressive stress, the magnetic anisotropy of the positive magnetostrictive free layer is weakened while that of the pinned layer with negative magnetostriction is enhanced. Thus, the magnetic configuration of the spin-valve is appropriate for use as a sensor. Through the bending process, we design a prototype magnetic sensor cell array and successfully show a sensing capability by detecting magnetic microbeads. This attempt demonstrates that appropriate control of stress, induced by repetitive bending of flexible magnetic layers, can be effectively used to modify the magnetic configurations for the magnetic sensor.

A positive magnetostrictive single layer (CoFe) and top-pinned spin-valve structure with positive magnetostrictive free (NiFe) and pinned (CoFe) layers were deposited on flexible polyethylene terephthalate film to investigate the changes in the magnetic properties in flexible environments, especially with a repetitive bending process. It was found that the stress, applied by repetitive bending, changes significantly the magnetic anisotropy of both layers in a single and spin-valve structure depending on the direction of applied stress. The changes in magnetic anisotropy were understood in terms of the inverse magnetostriction effect (the Villari effect) and the elastic recovery force from the flexibility of the polymer substrate. Repetitive bending with tensile stress transverse (or parallel) to the magnetic easy axis was found to enhance (or reduce) the magnetic anisotropy and, consequently, the magnetoresistance ratio of a spin-valve. The observed effects of bending stress in this study should be considered for the practical applications of electro-magnetic devices, especially magneto-striction sensor.

Beong Ki Cho, which was incorrectly given as Beong Ki. Cho. This has now been corrected in the PDF and HTML versions of the Article.

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