Polyphenylcarbosilane as a novel preceramic polymer for SiC was synthesized from thermal

No abstract

In this study, b-SiC powder was prepared using a pyrolysed spherical precursor derived from the hydrolysis mixture of phenyltrimethoxysilane and tetraethyl orthosilicate. Before the pyrolysed experiment, an alkoxide precursor was characterised using 29 Si solid nuclear magnetic resonance, Fourier transform infrared spectroscopy and thermogravimetric analysis. The alkoxide precursor was heated at 1800uC for 4 h under an Ar atmosphere. To examine the pyrolysed residue after heat treatment, the sample was collected and analysed with X-ray diffraction. The X-ray diffraction results for the sample show diffraction peaks at ,35, 60 and 73u, which correspond to the b-SiC phase. According to the results of chemical analysis, the SiC content of the powder that was prepared at 1800uC was determined to be 99?4%. The sintering behaviour of the prepared b-SiC powder was examined using B 4 C and C as sintering additives in the temperature range of 1900-2200uC.

Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, SiO 2 thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-CH 2-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350 o C under N 2 atmosphere, chemical composition and dielectric constant of the thin film were SiO 0.27 C 1.94 and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.

In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.