In this study we investigate an InGaN layer damaged by the bombardment of energetic oxygen ions that is placed beneath a p-electrode to act as a current blocking layer (CBL). This method not only increases light output power but also alleviates the current crowding problem. Our tests showed that the light output power was increased by 10% at 60 mA compared to conventional light-emitting diodes (LEDs). Additionally, our method improves LED productivity and effectiveness as it creates a nearly planar insulation layer through disordering or Ga sputtering of the InGaN surface and Ga2O3 formation.

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The authors have fabricated the surface-textured GaN based light emitting diodes (LEDs) by incorporating a transparent powder onto an indium tin oxide (ITO) surface and exposed n-GaN surface to improve the light extraction efficiency by decreasing the total internal reflection and by achieving an angular randomization of the photons. The ITO surface and exposed n-GaN surface was simultaneously textured using a method known as natural lithography. The Al2O3 powders were coated onto the LED surface as a random mask for dry etching. After packaging, the light output powers of the LEDs with the textured ITO layer and with nanorods at n-GaN were enhanced about ∼ 11 and 15 %, respectively, compared with that of the conventional LED. Also, the light output power of the LED with both the textured ITO layer and the formed n-GaN nanorods increased by ∼ 24% compared with that of the conventional LED.