The 6ϫ6 effective mass Hamiltonian for semiconductor heterostructures grown on (11N)-oriented substrates is derived and is compared with the 4ϫ4 model. The hole subbands of InGaAs/InP single quantum wells grown on (11N)-oriented substrates with Nϭϱ ͑that is, ͑001͔͒, 0, 1 are calculated using the effective mass Hamiltonian as an example. The spin-orbit coupling affects the light-hole subband at k ͉͉ ϭ0, but it affects all subbands at finite k ͉͉ for all substrate orientations. In the 4ϫ4 model ͑without spin-orbit coupling͒, the coupling between the heavy hole and the light hole is overestimated. At a critical uniaxial stress, the position of the first heavy hole and the first light hole as the highest energy level cross over. The separation between the first heavy hole and the first light hole is overestimated at the uniaxial stress below the critical value and is underestimated above the critical stress in the 4ϫ4 model. The spin-orbit coupling greatly affects the valence band structures of the semiconductor heterostructures resulting in the modifications of the optical transitions anisotropy for structures grown on (11N)-oriented substrates.

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