In this paper, a C-band 10 W power amplifier with internally matched input and output matching circuit is designed and fabricated. The used power transistor for the power amplifier is GaAs pHEMT bare-chip. The wire bonding analysis considering the size of the capacitor and the position of transistor pad improves the accurate design. The matching circuit design with the package effect using EM simulation is performed. To reduce the unsymmetry of IMD3 in 2-tone measurement due to the memory effect, the bias circuit minimizing the memory effect is proposed and employed. The measured P 1dB , power gain, and power added efficiency are 39.8～40.4 dBm, 9.7～10.4 dB, and 33.4～38.0 %, respectively. Adopting the proposed bias circuit, the difference between the upper and lower IMD3 is less than 0.76 dB.Key words : IMFET, Memory Effect, C-Band Power Amplifier, GaAs pHEMT . 사용되는 고주 파 전력 트랜지스터의 소자로는 GaAs HEMT, HFET 등이 사용된다. 최근에는 GaN HEMT 같은 화합물 소자들이 주류를 이루고 있으며 [2], [3] , 낮은 주파수에 ⓒ