A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multi-function input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium-gallium-zinc-oxide (a-IGZO) TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46" FHD panel and the single-stage layout area is 400 μm × 126 μm. These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays (AMLCDs).Index Terms-Gate driver circuit, high-resolution, narrow-bezel, thin-film transistor (TFT).C.-L. Lin is with the