Amorphous CuZnSnS precursor lms were prepared by solgel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A Cu2ZnSnS4 lm with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200• C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the Cu2ZnSnS4. However, when the precursor lms were annealed with sulfur powder together at temperatures between 360 and 480• C, the CZTS lm containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480• C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.

Fe 77 Co 2 Zr 9 B 10 Cu 2 alloy prepared by melt-spinning was annealed at different heat treatment conditions. The thermal property, microstructure and magnetic property of alloys were investigated by differential thermal analysis (DTA), X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM). Fe 77 Co 2 Zr 9 B 10 Cu 2 alloy as-quenched is a mixture of α-Fe(Co) phase, H-phase and amorphous phase. With increasing annealing temperature, the H-phase transforms to α-Fe(Co) phase. Coercivity (Hc) of Fe 77 Co 2 Zr 9 B 10 Cu 2 alloy annealed at 600 • C for 40 min followed by furnace cooling reaches the minimum value, which is attributed to the small and homogeneous α-Fe(Co) grain structure.

Three kinds of precursor thin films with stacking orders of Cu/Sn/ZnS, Cu/Sn/ZnS/Cu/Sn/ZnS and Cu/Sn/ZnS/Cu/Sn/ZnS/Cu/Sn/ZnS were prepared by magnetron sputtering and annealed with sulfur powder. The microstructure, morphology and optical properties of thin films were investigated by X-ray diffraction, the Raman scattering, scanning electron microscopy and UV-visible spectrophotometer. The increase of cycle number decreases the sulfurizing temperature of the formation of Cu2ZnSnS4 phase. Chemical composition can be controlled by cycle sputtering deposition. After sulfurizing at 500 • C, the particle size and the band gap increase with increasing cycle number.

Fe75Co5Zr10B10 amorphous alloy prepared by melt-spinning was annealed at various temperatures. The thermal property and microstructures were investigated by dierential thermal analysis, X-ray diraction, and transmission electron microscopy. The crystallization process of Fe75Co5Zr10B10 amorphous alloy is complex. The α-Fe phase precipitates from the amorphous matrix in the initial stage of crystallization. The α-Mn type (χ) phase precipitates at 570• C, but transforms to α-Fe phase and the Laves C14(λ) phase at higher temperature. In the nal stage of crystallization, Fe3Zr, Fe2Zr, and unknown phases are observed and the λ-phase disappears. The α-Fe phase preferentially nucleates after annealing at 530• C for 10 min and the χ-phase preferentially nucleates after annealing at 600• C for 10 min. The nucleation barrier of χ-phase is larger than that of α-Fe phase. The local structure of χ-phase is more similar to amorphous phase.

Cu 2 ZnSnS 4 thin films were prepared on soda-lime glass by sulfurization of the Cu / Sn / ZnS precursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.