The sections in this article are Introduction Dissolution of Silicon Fluoride Solutions In Alkaline Solutions Hydrogen Evolution Dissolution Kinetics and Mechanisms Reaction Mechanisms A General Model Elementary Steps Reaction Paths Etch Rates in Various Systems General In Fluoride‐based Solutions Absence of Oxidants Effect of CrO 3 Addition Effect of HNO 3 Addition Addition of Other Oxidants Alkaline Solutions KOH Solutions Reaction Kinetics Other Inorganic Solutions Hydrazine Organic Solutions EDP Solutions Etching Reactions Ethanolamine Tetramethyl Ammonium Hydroxide ( TMAH ) Etch Rate Reduction of Heavily Doped Materials Mechanism Anisotropic Etching Rate‐Limiting Process Mechanism of Anisotropic Etching A General Model for both HF and KOH Solutions Basic Features of Anisotropically Etched Surfaces Surface Roughness Microroughness Macroroughness Crystallographic Characters and Formation of Hillocks Origins of Roughness Applications of Etching Cleaning RCA Cleaning Defect Etching Material Removal Uniform Material Removal Selective Material Removal