Freestanding deposits are grown on a silicon cantilever from a precursor gas by an electron induced process. Deposit mass determination is performed with an atomic force microscopy setup, where the cantilever resonance frequency shift, resulting from mechanical removal of the deposit, is measured. Deposits from hexafluoroacetylacetonato-Cu͑I͒-vinyltrimethylsilane show densities ranging from 2.05± 0.45 to 3.75± 0.55 g / cm 3 . Deposits from tetramethoxysilane have a constant density of ͑1.9± 0.3͒ g/cm 3 . Densities of deposits from Co 2 ͑CO͒ 8 and ͓RhCl͑PF 3 ͒ 2 ͔ 2 are linearly related to their composition. The ratio of impinging electrons per deposited atom, beam heating, and thermal stability of the precursor molecule determine the density and composition in focused-electron-beam-induced deposits.

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The deposition of amorphous alumina (Al2O3) films on four inch wafers with high deposition rate (up to 50 nm/min) by an advanced HV-CVD technique is discussed. Amorphous nature of the films is confirmed by X-ray diffraction. Refractive index of the deposited alumina can be adjusted in the large range (1.3-1.62@633 nm) by varying the substrate temperate during the deposition. The films are highly transparent. The density and stoichiometry of the deposits are also influenced by deposition conditions. Presence of -OH groups is observed in some cases.