We report on the observation of resonant tunneling phenomena due to the electronic transport through zero- and two-dimensional (0D and 2D) states in n-type nanocrystalline silicon (nc-Si)∕p-type crystalline silicon heterostructures. The transport information of both the 0D and 2D carriers has been extracted by the analysis of magnetic-field-dependent Hall data. Clear 2D-0D steplike and 0D-0D spikelike resonant tunneling structures have been demonstrated up to the high temperature of 220 and 50K in the natural quantum dot system, respectively. The revealed quantum tunneling information should facilitate more practical and more efficient application of nc-Si-based resonant tunneling devices.

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By the aid of magnetic-field-dependent Hall effect measurements, we have extracted the electron mobility and concentration in hydrogenated Si nanocrystals grown on crystalline silicon substrates within the framework of mobility spectrum analysis. A unified model based on diffusive and ballistic transport mechanisms has been employed to explain the observed electron mobility in Si nanocrystals with different doping levels, as well as the mobility edge in low-doping Si nanocrystals. Both the theoretical and experimental results clearly demonstrate the control of the electronic band structures by shallow impurity phosphorus doping in Si nanocrystals, which provide an experimental basis for further nanoelectronic device design using Si nanocrystals.

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