Studies by Raman spectroscopy of two kinds of Si/SiGe nanostructures-quantum dot multilayers and planar superlattices-reveal a wide variety of spectral features including first-and second-order Raman scattering, polarized Raman scattering, and low-frequency inelastic light scattering associated with folded acoustic phonons. Here we overview how such features can be employed to semi-quantitatively analyze the strain, chemical composition, and thermal conductivity in these industrially important materials that are widely used for producing electronic and optoelectronic devices.