A new technique for wall conditioning that will be especially useful for future larger superconducting tokamaks, such as ITER, has been successfully developed and encouraging results have been obtained. Solid carborane powder, which is non-toxic and non-explosive, was used. Pulsed RF plasma was produced by a non-Faraday shielding RF antenna with RF power of 10 kW. The ion temperature was about 2 keV with a toroidal magnetic field of 1.8 T and a pressure of 3 × 10-1 Pa. Energetic ions broke up the carborane molecules, and the resulting boron ions struck and were deposited on the first wall. In comparison with glow discharge cleaning boronization, the B/C coating film shows higher adhesion, more uniformity and longer lifetime during plasma discharges. The plasma performance was improved after ICRF boronization.

The evolution of recycling behaviour has been investigated during long pulse discharges in the HT-7 tokamak after ICRF boronization (C2B10H12) using the H/(H+D) ratio and the edge recycling coefficient R. After boronization, impurity reduction is observed, attributed to the fresh boron film, but the recycling coefficient can exceed unity due to a large amount of hydrogen absorbed in the film, leading to an uncontrollable density rise and discharge termination. When the H/(H+D) ratio was reduced to less than 25%, the electron density was easily controlled. The longest discharge, up to 240 s with central electron temperature Te(0) of about 1.0 keV and central electron density ne(0) of 0.8 × 1019 m−3, was achieved following boronization. After many discharges the effectiveness of boron film was weakened, and the density rise was correlated with an increase in both carbon and oxygen radiation which limited the duration of long pulse discharges.

Coinage metal bicyclic amidinates for chemical vapor deposition.

In advanced microelectronics, precise design of liner and capping layers becomes critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLE-CVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes pure, smooth, nanocrystalline and highly conformal Co films with highly controllable growth characteristics. This process allows full Co 2 encapsulation of nanoscale Cu interconnects, thus stabilizing Cu against diffusion and electromigration. Electrical measurements and high-resolution elemental imaging studies show that the DLE-CVD Co encapsulation layer can improve the reliability and thermal stability of Cu interconnects. Also, with the high conductivity of Co, the DLE-CVD Co encapsulation layer can potentially further decrease the power consumption of nanoscale Cu interconnects, paving the way for Cu interconnects with higher efficiency in future high-end microelectronics.