We report a simple and low-cost method for constructing high-quality p-type ZnSe nanowires/n-type Si heterojunction by growing p-type ZnSe:N nanowires on n-type Si substrate. The heterojunction shows excellent stability and reproducibility to white light irradiation with a fast response time (103). And the photovoltaic characteristics of it exhibit a fill factor of about 24% and a high power conversion efficiency of 0.89%.

ZnS0.59Se0.41 alloy nanowires were prepared on gold-coated Si substrates by the thermalevaporation of a mixture of ZnSe and ZnS powders. Field-effect transistors (FETs) constructed fromthe ZnS0.59Se0.41 NWs verified their p-type nature with a hole concentration of 3.1×1018 cm-3.Inaddition,the photoresponse indicates their potential for photoelectric applications.