To explore the effect of nanoindentation temperature on the plastic deformation of 3C-SiC, it is possible to analyze the 3C-SiC load-displacement changes at different temperatures and the dislocation propagation in the plastic deformation stage. The 3C-SiC nanoindentation model is established on the basis of molecular dynamics interatomic interaction potential. The model combines the 3C-SiC crystal structure to optimize the Vashishta potential function and modifies the relaxation system, system boundary, and other simulated environmental factors. The plastic deformation process of 3C-SiC at different temperatures is analyzed from multiple angles such as the load-displacement curve, the stress distribution during the plastic deformation stage of the matrix, and the formation and growth of specimen dislocations. During the pressing process, intermolecular dislocations and stress are concentrated in the elastic-plastic deformation zone. The load value of the elastic-plastic deformation zone under high temperature environment is generally higher, and the energy of the dislocation loop will be released. In the plastic deformation zone, the dislocation loop will break under the action of high temperature environmental load. The premature release of energy will cause the load value to drop. During the pressing process, the bearing capacity of 3C-SiC polycrystalline will decrease as the temperature rises. Plastic deformation occurs inside the material, and dislocations nucleate and expand from the grain boundary to the crystal and finally form a U-shaped dislocation ring.

The molecular dynamics method was used to analyze the influence of simulated temperature on the damage expansion process of the 3C-SiC sample under nano-indentation loading in order to study the influence of temperature on the internal damage and expansion mechanism of the 3C-SiC single crystal sample further during the nano-indentation loading process. A simulation test platform for diamond indenter indentation was established. The process of stress and strain distribution, dislocation evolution, dislocation expansion and potential energy change were analyzed, combined with the radial distribution function and load displacement curve. The influence of temperature on the 3C-SiC material was discussed. The variation trend of the potential energy-step curve is basically the same at the temperatures of 0 K, 300 K, 600 K and 900 K. The difference in strain distribution was characterized by the influence of temperature on stress intensity, expansion direction and type. The microcosmic manifestation is the significant difference in the dislocation slip at low temperature. In the process of dislocation evolution and expansion, dislocation climbs at room temperature and increases at high temperature, which is closely related to energy release. This study has certain guiding significance for investigating the internal damage difference and temperature effect of the 3C-SiC sample.