The notoriously poor stability of perovskite solar cells is a crucial issue restricting commercial applications. Here, a fluorinated perylenediimide (F‐PDI) is first introduced into perovskite film to enhance the device's photovoltaic performance, as well as thermal and moisture stability simultaneously. The conductive F‐PDI molecules filling at grain boundaries (GBs) and surface of perovskite film can passivate defects and promote charge transport through GBs due to the chelation between carbonyl of F‐PDI and noncoordinating lead. Furthermore, an effective multiple hydrophobic structure is formed to protect perovskite film from moisture erosion. As a result, the F‐PDI‐incorporated devices based on MAPbI3 and Cs0.05 (FA0.83MA0.17)0.95 Pb (Br0.17I0.83)3 absorber achieve champion efficiencies of 18.28% and 19.26%, respectively. Over 80% of the initial efficiency is maintained after exposure in air for 30 days with a relative humidity (RH) of 50%. In addition, the strong hydrogen bonding of F···H‐N can immobilize methylamine ion (MA+) and thus enhances the thermal stability of device, remaining nearly 70% of the initial value after thermal treatment (100 °C) for 24 h at 50% RH condition.

Perovskite solar cells (PSCs) are a promising photovoltaic technology for stretchable applications because of their flexible, light‐weight, and low‐cost characteristics. However, the fragility of crystals and poor crystallinity of perovskite on stretchable substrates results in performance loss. In fact, grain boundary defects are the “Achilles’ heel” of optoelectronic and mechanical stability. We incorporate a self‐healing polyurethane (s‐PU) with dynamic oxime–carbamate bonds as a scaffold into the perovskite films, which simultaneously enhances crystallinity and passivates the grain boundary of the perovskite films. The stretchable PSCs with s‐PU deliver a stabilized efficiency of 19.15 % with negligible hysteresis, which is comparable to the performance on rigid substrates. The PSCs can maintain over 90 % of their initial efficiency after 3000 hours in air because of their self‐encapsulating structure. Importantly, the self‐healing function of the s‐PU scaffold was verified in situ. The s‐PU can release mechanical stress and repair cracks at the grain boundary on multiple levels. The devices recover 88 % of their original efficiency after 1000 cycles at 20 % stretch. We believe that this ingenious growth strategy for crystalline semiconductors will facilitate development of flexible and stretchable electronics.

A mechanically robust conducting polymer network electrode is architected for high-performance flexible PSCs and ST-PSCs. The network structure simultaneously satisfies high conductivity, high transmittance, and excellent flexibility. Accordingly, the flexible PSCs and PSM with a record PCE of 19.0% and 10.9% are achieved with excellent mechanical flexibility and long-time stability.

The translation of unparalleled efficiency from the lab-scale devices to practical-scale flexible modules affords a huge performance loss for flexible perovskite solar cells (PSCs). The degradation is attributed to the brittleness and discrepancy of perovskite crystal growth upon different substrates. Inspired by robust crystallization and flexible structure of vertebrae, herein, we employ a conductive and glued polymer between indium tin oxide and perovskite layers, which simultaneously facilitates oriented crystallization of perovskite and sticks the devices. With the results of experimental characterizations and theoretical simulations, this bionic interface layer accurately controls the crystallization and acts as an adhesive. The flexible PSCs achieve the power conversion efficiencies of 19.87% and 17.55% at effective areas of 1.01 cm 2 and 31.20 cm 2 respectively, retaining over 85% of original efficiency after 7000 narrow bending cycles with negligible angular dependence. Finally, the modules are assembled into a wearable solar-power source, enabling the upscaling of flexible electronics.

High electronic quality perovskite films with a balanced charge transportation is critical for satisfying high‐performance for perovskite solar cells (PVSCs). However, the inferior band alignment of tin‐based perovskite films with an adjacent hole‐transport layer (HTL) leads to a poor hole transportation and collection. In this work, the semiconducting molecule poly[tetraphenylethene 3,3′‐(((2,2‐diphenylethene‐1,1‐diyl)bis(4,1‐phenylene))bis(oxy))bis(N,N‐dimethylpropan‐1‐amine)tetraphenylethene] (PTN‐Br) is introduced into a lead‐free perovskite precursor to form a bulk heterojunction film. In addition, the PTN‐Br molecule with the suitable highest occupied molecular orbital energy level (−5.41 eV) can fill into the grain boundaries of the perovskite film, serving as a hole‐transport medium between grains. The gradient band alignment of the perovskite film with poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL ensures excellent hole transportation and higher open‐circuit voltage. In addition, the π‐conjugated polymer PTN‐Br can passivate trap states within the perovskite film due to the formation of Lewis adducts between uncoordinated Sn atoms and the dimethylamino of PTN‐Br. Consequently, a champion efficiency of 7.94% is achieved with significant enhancements in the open‐circuit voltage and fill factor. Furthermore, the PTN‐Br incorporated device shows better ultra violet (UV) stability because of the UV barrier and passivating effect of PTN‐Br, retaining about 66% of its initial efficiency after 5 h of continuous UV light irradiation.