In order to meet the requirements of high performance, miniaturization, low cost, low power consumption and multi-function, three-dimensional (3D) integrated technology has gradually become a core technology. With the development of 3D integrated technology, it has been used in imaging sensors, optical integrated microsystems, inertial sensor microsystems, radio-frequency microsystems, biological microsystems and logic microsystems, etc. Through silicon via (TSV) is the core technology of a 3D integrated system, which can achieve vertical interconnection between stacked chips. In this paper, the development and progress of multi-physics simulation design for TSV-based 3D integrated systems are reviewed. Firstly, the electrical simulation design of TSV in a 3D integrated system is presented, including the lumped parameters model-based design and numerical computation model-based design. Secondly, the thermal simulation design of TSV in a 3D integrated system is presented based on the analytical model or numerical computation model. Thirdly, the multi-physics co-simulation design of TSV in a 3D integrated system is presented, including the thermal stress and electron thermal coupling simulation design. Finally, this paper is concluded, and the future perspectives of 3D integrated systems are presented, including the advanced integrated microsystems, the crossed and reconfigurable architecture design technology and the standardized and intelligent design technology.

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In this paper, a thermal-stress coupling optimization strategy for coaxial through silicon via (TSV) is developed based on the finite element method (FEM), artificial neural network (ANN) model and particle swarm optimization (PSO) algorithm. In order to analyze the effect of design parameters on the thermal-stress distribution of coaxial TSV, the FEM simulations of coaxial TSV are conducted by COMSOL Multiphysics. The structure of coaxial TSV is symmetric. The mapping relationships between the design parameters and performance indexes are described by ANN models based on the simulation data of FEM. In addition, the multi-objective optimization function is formulated based on the desired performance indexes, and then the design parameters are optimized by the modified PSO algorithm. Based on the optimized design parameters, the effectiveness of the developed method is validated by FEM simulations. The simulated performance indexes agree well with the desired ones, which implies that the design parameters of coaxial TSV can be optimized to control the thermal-stress distribution. Therefore, the thermal-stress coupling optimization of coaxial TSV can achieve thermal-stress management to improve its reliability.

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In this research, an efficient thermal-stress coupling design method for a Chiplet-based system with a coaxial through silicon via (CTSV) array is developed by combining the support vector machine (SVM) model and particle swarm optimization algorithm with linear decreasing inertia weight (PSO-LDIW). The complex and irregular relationship between the structural parameters and critical indexes is analyzed by finite element simulation. According to the simulation data, the SVM model is adopted to characterize the relationship between structural parameters and critical indexes of the CTSV array. Based on the desired critical indexes of the CTSV array, the multi-objective evaluation function is established. Afterwards, the structural parameters of the CTSV array are optimized through the PSO-LDIW algorithm. Finally, the effectiveness of the developed method is verified by the finite element simulation. The simulated peak temperature, peak stress of the Chiplet-based system, and peak stress of the copper column (306.16 K, 28.48 MPa, and 25.76 MPa) well agree with the desired targets (310 K, 30 MPa, and 25 MPa). Therefore, the developed thermal-stress coupling design method can effectively design CTSV arrays for manufacturing high-performance interconnect structures applied in Chiplet-based systems.