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To match the products such as large-size and high-resolution TFT-LCD, the thicker Cu films with lower resistance are needed. A comparative study of microstructural and electrical properties of the Cu films with different thickness (420-1040nm) deposited by one-step and multi-step dc magnetron sputtering technique is presented in this paper.

In this paper, we investigated the recrystallization process of Cu films. By annealing at a high temperature of 300°C or above, the grain size of Cu films remarkably increasesd, and the number of grain boundaries decreased. Annealing helped to restructure of the films, causing to improve the electron transfer rate and the resistance of films droped by 15%.So that the thickness of the deposited Cu films can be reduced to achieve the same resistance, the production cost can be saved, and the production efficiency of the PVD machine will be improved.