The molecular understanding of autophagy has originated almost exclusively from yeast genetic studies. Little is known about essential autophagy components specific to higher eukaryotes. Here we perform genetic screens in C. elegans and identify four metazoan-specific autophagy genes, named epg-2, -3, -4, and -5. Genetic analysis reveals that epg-2, -3, -4, and -5 define discrete genetic steps of the autophagy pathway. epg-2 encodes a coiled-coil protein that functions in specific autophagic cargo recognition. Mammalian homologs of EPG-3/VMP1, EPG-4/EI24, and EPG-5/mEPG5 are essential for starvation-induced autophagy. VMP1 regulates autophagosome formation by controlling the duration of omegasomes. EI24 and mEPG5 are required for formation of degradative autolysosomes. This study establishes C. elegans as a multicellular genetic model to delineate the autophagy pathway and provides mechanistic insights into the metazoan-specific autophagic process.
Apoptosis-inducing factor (AIF), a mitochondrial oxidoreductase, is released into the cytoplasm to induce cell death in response to apoptotic signals. However, the mechanisms underlying this process have not been resolved. We report that inactivation of the Caenorhabditis elegans AIF homolog wah-1 by RNA interference delayed the normal progression of apoptosis and caused a defect in apoptotic DNA degradation. WAH-1 localized in C. elegans mitochondria and was released into the cytosol and nucleus by the BH3-domain protein EGL-1 in a caspase (CED-3)-dependent manner. In addition, WAH-1 associated and cooperated with the mitochondrial endonuclease CPS-6/endonuclease G (EndoG) to promote DNA degradation and apoptosis. Thus, AIF and EndoG define a single, mitochondria-initiated apoptotic DNA degradation pathway that is conserved between C. elegans and mammals.
Vertical van der Waals heterostructures are formed when different 2D crystals are stacked on top of each other. Improved optical properties arise in semiconducting transition metal dichalcogenide (TMD) 2D materials, such as MoS2, when they are stacked onto the insulating 2D hexagonal boron nitride (h-BN). Most work to date has required mechanical exfoliation of at least one of the TMDs or h-BN materials to form these semiconductor:insulator structures. Here, we report a direct all-CVD process for the fabrication of high-quality monolayer MoS2:h-BN vertical heterostructured films with isolated MoS2 domains distributed across 1 cm. This is enabled by the use of few-layer h-BN films that are more robust against decomposition than monolayer h-BN during the MoS2 growth process. The MoS2 domains exhibit different growth dynamics on the h-BN surfaces compared to bare SiO2, confirming that there is strong interaction between the MoS2 and underlying h-BN. Raman and photoluminescence spectroscopies of CVD-grown MoS2 are compared to transferred MoS2 on both types of substrates, and our results show directly grown MoS2 on h-BN films have smaller lattice strain, lower doping level, cleaner and sharper interfaces, and high-quality interlayer contact.
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