No abstract

Resistive random-access memory (RRAM) is promising for various low-power applications, including Internet of Things (IOTs), neuromorphic and data-centric computing. However, the poor reliability, mainly the variability in switching, is one of the biggest challenges for RRAM. Here, a novel geometry of electrochemical metallization memory (ECM)-based RRAM is proposed with lower switching voltage and less switching variability. From COMSOL Multiphysics simulation, the intensity and distribution of electric field can be tuned by design of RRAM geometry in C-shape. It is anticipated that a higher and more refined electric field can improve the RRAM variability. This hypothesis is validated with experiment on forming-free ECM-based RRAM in C-shape and traditional square-shape, where around 36% less set voltage and 32% less set variation observed for as-designed C-shaped RRAM.