The development of highly active and stable electrocatalysts for ethanol electroxidation is of decisive importance to the successful commercialization of direct ethanol fuel cells. Despite great efforts invested over the past decade, their progress has been notably slower than expected. In this work, the facile solution synthesis of 2D PdAg alloy nanodendrites as a high-performance electrocatalyst is reported for ethanol electroxidation. The reaction is carried out via the coreduction of Pd and Ag precursors in aqueous solution with the presence of octadecyltrimethylammonium chloride as the structural directing agent. Final products feature small thickness (5-7 nm) and random in-plane branching with enlarged surface areas and abundant undercoordinated sites. They exhibit enhanced electrocatalytic activity (large specific current ≈2600 mA mgPd-1) and excellent operation stability (as revealed from both the cycling and chronoamperometric tests) for ethanol electroxidation. Control experiments show that the improvement comes from the combined electronic and structural effects.
Controlled synthesis of lead halide perovskite (LHP) nanostructures not only benefits fundamental research but also offers promise for applications. Among many synthesis techniques, although catalytic vapor–liquid–solid (VLS) growth is recognized as an effective route to achieve high-quality nanostructures, until now, there is no detailed report on VLS grown LHP nanomaterials due to the emerging challenges in perovskite synthesis. Here, we develop a direct VLS growth for single-crystalline all-inorganic lead halide perovskite (i.e., CsPbX3; X = Cl, Br, or I) nanowires (NWs). These NWs exhibit high-performance photodetection with the responsivity exceeding 4489 A/W and detectivity over 7.9 × 1012 Jones toward the visible light regime. Field-effect transistors (FET) based on individual CsPbX3 NWs are also fabricated, where they show the superior hole mobility of up to 3.05 cm2/(V s), higher than other all-inorganic LHP devices. This work provides important guidelines for the further improvement of these perovskite nanostructures for utilizations.
Rapid development of artificial intelligence techniques ignites the emerging demand on accurate perception and understanding of optical signals from external environments via brain-like visual systems. Here, enabled by quasi–two-dimensional electron gases (quasi-2DEGs) in InGaO3(ZnO)3 superlattice nanowires (NWs), an artificial visual system was built to mimic the human ones. This system is based on an unreported device concept combining coexistence of oxygen adsorption-desorption kinetics on NW surface and strong carrier quantum-confinement effects in superlattice core, to resemble the biological Ca2+ ion flux and neurotransmitter release dynamics. Given outstanding mobility and sensitivity of superlattice NWs, an ultralow energy consumption down to subfemtojoule per synaptic event is realized in quasi-2DEG synapses, which rivals that of biological synapses and now available synapse-inspired electronics. A flexible quasi-2DEG artificial visual system is demonstrated to simultaneously perform high-performance light detection, brain-like information processing, nonvolatile charge retention, in situ multibit-level memory, orientation selectivity, and image memorizing.
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gatetunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS 2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a highperformance photodetector exhibiting a large on/off current ratio of 4 × 10 4 , fast response of 50 μs, and high detectivity of 1.64 × 10 11 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
Due to the efficient photocarrier separation and collection coming from their distinctive band structures, superlattice nanowires (NWs) have great potential as active materials for high-performance optoelectronic devices. In this work, InGaZnO NWs with superlattice structure and controllable stoichiometry are obtained by ambient-pressure chemical vapor deposition. Along the NW axial direction, perfect alternately stacking of InGaO(ZnO) 4 + blocks and InO 2 − layers is observed to form a periodic layered structure. Strikingly, when configured into individual NW photodetectors, the Ga concentration is found to significantly influence the amount of oxygen vacancies and oxygen molecules adsorbed on the NW surface, which dictate the photoconducting properties of the NW channels. Based on the optimized Ga concentration (i.e., In 1.8 Ga 1.8 Zn 2.4 O 7 ), the individual NW device exhibits an excellent responsivity of 1.95 × 10 5 A/W and external quantum efficiency of as high as 9.28 × 10 7 % together with a rise time of 0.93 s and a decay time of 0.2 s for the ultraviolet (UV) photodetection. Besides, the obtained NWs can be fabricated into large-scale parallel arrays on glass substrates as well to achieve fully transparent UV photodetectors, where the performance is on the same level or even better than many transparent photodetectors with high performance. All the results discussed above demonstrate the great potential of InGaZnO superlattice NWs for next-generation advanced optoelectronic devices.
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