Pb,La)(Zr,Ti)O 3 is a ferroelectric material which has excellent pyroelectric, dielectric and ferroelectric properties, and has a wide application prospect in the field of microelectronics and integrated circuit. A variety of techniques have been used for the deposition of ferroelectric thin films, among the processes, the sol-gel method has its advantages. In this study, the pyroelectric lead lanthanum zirconnate titanate (PLZT) (8/65/35) thin films were prepared on Pt (111)/Ti/SiO 2 /Si (100) substrates using sol-gel method and their characteristics were analyzed. The orientation and structural properties of the PLZT films were measured by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively. It was found that PbTiO 3 (PT) can promote the crystallinity of PLZT thin films. According to the results of the SEM, under the 700°C holding temperature, the lead content of PLZT films decreased with the increment of holding time. The ferroelectric hystersis loop, pyroelectric coefficient and dielectric constant were also measured. The electrical properties of the films were optimized by rapid thermal process (RTP) at 700°C. Ferroelectric hysteresis loop of PLZT thin film with PT seed layer was tested at the triangular wave voltage of 50V. The results showed that the remanent polarization (Pr) was 25.7 μC/cm 2 and the coercive strength (Ec) was 68 kV/cm. At 1 kHz, dielectric constant (ε r ) of 951 and dielectric loss (tanδ) of 0.048 were obtained, respectively. The pyroelectric coefficient was 1125μC/m 2 K. The results demonstrated that PLZT thin films could be prepared by sol-gel method and had good ferroelectric, dielectric and pyroelectric properties.

Pyroelectric lead lanthanum zirconnate titanate (PbLa 8 Zr 65 Ti 35 ) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO 2 /Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650℃ and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.

Effects of Pb 5 Ge 3 O 11 (PGO) sintering additive on the sintering temperature (Ts) and the pyroelectric properties of 1×1mm 2 Lead-zirconate-titanate (PZT) thick films on Pt/Ti/SiO 2 /Si substrate were studied. The pattern of PGO-added PZT thick films were directly formed by electrophoresis deposition (EPD). The PGO percentage and Ts were optimized at the range of from 0wt% to 9wt% and 700°C to 900°C, respectively. The 800°C-sintered PZT films with 3wt% PGO exhibited room-temperature pyroelectric coefficient (Pc) of 1.73×10-8 C/cm 2 K, permittivity of 330 and dielectric loss of 1.5%, figure of merit for detectivity (FD) of 1.7×10-5 Pa-0.5 , respectively. These results demonstrate that the patterned PGO-added PZT thick films show potential applications in Si MEMS infrared detectors.