Molybdenum disulfide (MoS 2 ) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS 2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS 2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses ntype conductivity in MoS 2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.

SummaryTudor-SN protein accumulates in stress granules in response to salt stress in Arabidopsis. It binds GA20ox3 mRNA in vivo and up-regulates GA20ox3 levels to maintain plant growth under salt stress.

We introduce a metal-assisted exfoliation method to produce few-layer black phosphorus with the lateral size larger than 50 μm and the area 100 times larger than those exfoliated using the normal "scotch-tape" technique. Using a field effect transistor it was found the hole mobility is 68.6 cm V s and the current on/off ratio can reach about 2 × 10.