Molybdenum disulfide (MoS 2 ) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS 2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS 2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses ntype conductivity in MoS 2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.

With a counter-diabatic field supplemented to the reference control field, the 'shortcut to adiabaticiy' (STA) protocol is implemented in a superconducting phase qubit. The Berry phase measured in a short time scale is in good agreement with the theoretical result acquired from an adiabatic loop. The trajectory of a qubit vector is extracted, verifying the Berry phase alternatively by the integrated solid angle. The classical noise is introduced to the amplitude or phase of the total control field. The mean of the Berry phase measured under either noise is almost equal to that without noise, while the variance under the amplitude noise can be described by an analytical expression. * yiyin@zju.edu.cn

Two-dimensional Van der Waals heterostructures provide an amazing platform to study the fundamental physics property and build optoelectrical devices because of their abundant band structures and the clean interface. In...

BP grown using lead instead of tin as the mineralizer exhibits better properties, which are beneficial for its applications.