As an excellent n-type semiconductor, indium oxide (In O ) is also a good candidate for photocatalysis such as light-induced water splitting. However, the efficiency of the oxygen evolution reaction (OER) underperforms in view of the wide band gap (BG) and fast charge recombination in In O . N-doping provides a sound method to narrow the BG and to prohibit the charge recombination by forming new energy levels between the valence band (VB) and the conduction band (CB). In this work, an In-based organic framework sod-ZMOF was used as a precursor to prepare the N-doped In O . After calcination, sod-ZMOF is transformed into N-doped In O nanocrystalline, in which the ligand within sod-ZMOF serves as the nitrogen source. In addition, sod-ZMOF acts as self-template during calcination to generate abundant nanopores within the In O frameworks, providing large specific surface area and active sites for OER. The BG is narrowed to 2.9 from 3.7 eV of the pure In O on account of the N-doping. N species are doped in both the substitutional and interstitial fashion, and the interstitial doping is believed to improve the photo-induced carrier separation by the formation of oxygen vacancies. As a consequence, the overpotential for OER is effectively decreased from the pure In O , and the electrocatalytic experiment proves superior catalytic activity with a high current density and long-term durability compared to the In O nanoparticles obtained from In(OH) .

N‐doped In2O3 was obtained from the corresponding metal‐organic‐framework (MOF) precursor, and demonstrated remarkable performance in photocatalytic water splitting. N‐doping endows the catalyst with a narrowed energy band and stabilized photo‐induced charge separation. Large specific surface area and multilevel porosity are derived from the porous structure of the In‐MOF. These features distinctly enhance the photocatalytic reactivity. More information can be found in the Full Paper by X. Sun, X. Sun et al. on page 7264.