DNN+NeuroSim is an integrated framework to benchmark compute-in-memory (CIM) accelerators for deep neural networks, with hierarchical design options from devicelevel, to circuit-level and up to algorithm-level. A python wrapper is developed to interface NeuroSim with a popular machine learning platform: Pytorch, to support flexible network structures. The framework provides automatic algorithm-to-hardware mapping, and evaluates chip-level area, energy efficiency and throughput for training or inference, as well as training/inference accuracy with hardware constraints. Our prior work (open-source framework DNN+NeuroSim V1.1: https://github.com/neurosim/DNN_NeuroSim_V1.1) was developed to estimate the impact of reliability in synaptic devices, and analog-to-digital converter (ADC) quantization loss on the accuracy and hardware performance of inference engines. In this work, we further investigated the impact of the "analog" emerging non-volatile memory (eNVM)'s non-ideal device properties for on-chip training. By introducing the nonlinearity, asymmetry, device-to-device and cycle-to-cycle variation of weight update into the python wrapper, and peripheral circuits for error/weight gradient computation in NeuroSim core, we benchmarked CIM accelerators based on state-of-the-art SRAM and eNVM devices for VGG-8 on CIFAR-10 dataset, revealing the crucial specs of synaptic devices for on-chip training. The proposed DNN+NeuroSim V2.0 framework is available on GitHub at https://github.com/neurosim/DNN_NeuroSim_V2.0.

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Deep learning hardware designs have been bottlenecked by conventional memories such as SRAM due to density, leakage and parallel computing challenges. Resistive devices can address the density and volatility issues, but have been limited by peripheral circuit integration. In this work, we demonstrate a scalable RRAM based in-memory computing design, termed XNOR-RRAM, which is fabricated in a 90nm CMOS technology with monolithic integration of RRAM devices between metal 1 and 2. We integrated a 128×64 RRAM array with CMOS peripheral circuits including row/column decoders and flash analog-to-digital converters (ADCs), which collectively become a core component for scalable RRAM-based in-memory computing towards large deep neural networks (DNNs). To maximize the parallelism of in-memory computing, we assert all 128 wordlines of the RRAM array simultaneously, perform analog computing along the bitlines, and digitize the bitline voltages using ADCs. The resistance distribution of low resistance states is tightened by write-verify scheme, and the ADC offset is calibrated. Prototype chip measurements show that the proposed design achieves high binary DNN accuracy of 98.5% for MNIST and 83.5% for CIFAR-10 datasets, respectively, with energy efficiency of 24 TOPS/W and 158 GOPS throughput. This represents 5.6X, 3.2X, 14.1X improvements in throughput, energydelay product (EDP), and energy-delay-squared product (ED 2 P), respectively, compared to the state-of-the-art literature. The proposed XNOR-RRAM can enable intelligent functionalities for area-/energy-constrained edge computing devices.