No abstract

Cesium-based trihalide perovskites have been demonstrated as promising light absorbers for photovoltaic applications due to their superb composition stability. However, the large energy losses (E ) observed in inorganic perovskite solar cells has become a major hindrance impairing the ultimate efficiency. Here, an effective and reproducible method of modifying the interface between a CsPbI Br absorber and polythiophene hole-acceptor to minimize the E is reported. It is demonstrated that polythiophene, deposited on the top of CsPbI Br, can significantly reduce electron-hole recombination within the perovskite, which is due to the electronic passivation of surface defect states. In addition, the interfacial properties are improved by a simple annealing process, leading to significantly reduced energy disorder in polythiophene and enhanced hole-injection into the hole-acceptor. Consequently, one of the highest power conversion efficiency (PCE) of 12.02% from a reverse scan in inorganic mixed-halide perovskite solar cells is obtained. Modifying the perovskite films with annealing polythiophene enables an open-circuit voltage (V ) of up to 1.32 V and E of down to 0.5 eV, which both are the optimal values reported among cesium-lead mixed-halide perovskite solar cells to date. This method provides a new route to further improve the efficiency of perovskite solar cells by minimizing the E .

A method is proposed to improve the photo/electroluminescence efficiency and stability of CsPbI3 perovskite nanocrystals (NCs) by using SrCl2 as a co‐precursor. The SrCl2 is chosen as the dopant to synthesize the CsPbI3 NCs. Because the ion radius of Sr2+ (1.18 Å) is slightly smaller than that of Pb2+ (1.19 Å) ions, divalent Sr2+ cations can partly replace the Pb2+ ions in the lattice structure of perovskite NCs and cause a slight lattice contraction. At the same time, Cl− anions from SrCl2 are able to efficiently passivate surface defect states of CsPbI3 nanocrystals, thus converting nonradiative trap states to radiative states. The simultaneous Sr2+ ion doping and surface Cl− ion passivation result in the enhanced photoluminescence quantum yield (up to 84%), elongated emission lifetime, and improved stability. Sr2+‐doped CsPbI3 NCs are employed to produce light‐emitting devices with a high external quantum yield of 13.5%.

Lead halide perovskite nanocrystals are currently under intense investigation as components of solution-processed light-emitting devices (LEDs). We demonstrate LEDs based on Ag doped–passivated CsPbI3 perovskite nanocrystals with external quantum efficiency of 11.2% and an improved stability. Ag and trilayer MoO3/Au/MoO3 structure were used as cathode and anode, respectively, which reduce the electron injection barrier and ensure the high transparency and low resistance of the anode. Silver ions diffuse into perovskite film from the Ag electrode, as confirmed by the elemental mapping, the presence of Ag 3d peaks in the X-ray photoelectron spectrum, and the peak shift in the X-ray diffraction patterns of CsPbI3. In addition to doping, silver ions play the beneficial role of passivating surface defect states of CsPbI3 nanocrystals, which results in increased photoluminescence quantum yield, elongated emission lifetime, and improved stability of perovskite films.