No abstract

Sr‐doped PbZrO3 antiferroelectric (AFE) thin films have been fabricated on the platinum‐buffered silicon substrates via the sol–gel technique. The temperature‐dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr‐modified PbZrO3 thin films with a Curie temperature of 251°C. The recoverable energy density and energy efficiency of the Sr‐doped PbZrO3 thin films were enhanced by the doping of strontium. Compared with the pure PbZrO3 AFE thin films, the performance against fatigue of the Sr‐doped PbZrO3 thin films were also improved greatly.

1.8 -μm-(Pb0.97La0.02)(Zr0.95−xSnxTi0.05)O3 antiferroelectric thick films with orthorhombic (x = 0.05 and 0.25) and tetragonal (x = 0.40) structure were deposited on platinum-buffered silicon substrates by using a chemical solution way. All the films had a uniform microstructure with pure perovskite phase. With increasing x value, dielectric constant and critical electric breakdown field of the thick films were gradually increased, while their saturated polarizations were decreased. As a result, their maximum recoverable energy-storage density was increased for the thick films with larger x values. A huge recoverable energy-storage density of 56 J/cm3 was obtained in antiferroelectric thick films with x = 0.40. Moreover, a good temperature-dependent stability of the energy storage was obtained in the all films from 20 to 120 °C.