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Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta 2 O 5 films with the device structure of Pt/Ti-Ta 2 O 5 /Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Tidoped Ta 2 O 5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta 2 O 5 thin films, where Ti addition plays an important role in the resistance switching process by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O-vacancy complex. Excellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.

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