A compact resistive-feedback low-noise amplifier (LNA) with single-ended input and differential output for multistandard wireless receivers up to 6 GHz is presented. To relax external RF filters and LNA linearity requirements, an on-chip LC bandpass load is included with a continuously tunable center frequency from 4.6 GHz to 5.8 GHz. The LNA is implemented in 65 nm CMOS technology and achieves a measured gain up to 30 dB and an IIP3 linearity between -6.5 dbm and -10.3 dBm. Due to noise cancelation techniques the noise figure (NF) reaches a low value of 1.6 dB in the band of interest. The power consumption is below 16 mW at 1.2 V single supply. The active chip area is 154 µm * 197 µm. Therefore the proposed LNA structure is a costeffective alternative to source-degeneration based narrowband LNA's with comparable performance. Since wide-band input impedance matching is employed, the LNA can be used in reconfigurable multi-standard wireless applications.

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This paper discusses a continuously tunable linear MOS resistor with bi-directional characteristics. The proposal is based on a 2 nd order non-linearity cancellation and is implemented by quasi-floating-gate (QFG) technique. The resistor is optimized for speed, noise and linearity, which makes it well-suited for tunable RF amplifiers. Parallel slices were introduced to enlarge the tuning range. A switching strategy is implemented to guarantee monotonic tuning with limited linearity loss. A testchip is fabricated in 65nm CMOS technology, which shows a -40dB distortion with moderate overdrive voltage and 200mV peak to peak signal amplitude and a high tuning ratio of 19. This MOS resistor has no static power consumption and a layout area of 39μm×37μm.

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A bi-directional active resistor structure with quasifloating gate MOS transistors and non-linearity compensation is used in a resistive negative feedback wide-band LNA implementation enabling a continuously tunable gain from 0dB to 24dB. The LNA has been realized in 65nm CMOS with a minimum noise figure of 2.5dB and IIP3 of -8dBm at highest gain. The LNA bandwidth is from 100MHz to 2GHz, with a power consumption of 12mW and an active area of 0.0375mm 2 .