This study reports the improved performance of quantum dot-sensitized solar cells by inserting ZnS layer between the TiO 2 film and CdS/CdSe quantum dots. An energy conversion efficiency of 2.84 % was attained. The enhancement introduced by inserting ZnS in moderation was attributed to the promoted nucleation of CdS QDs and enhanced light harvesting, as well as the improved electron transport at the interface in the photoanode.
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