We designed an epi-illumination SPIM system which utilizes a single objective and has an identical sample interface as an inverted fluorescence microscope with no additional reflection elements. It achieves subcellular resolution and single-molecule sensitivity and is compatible with common biological sample holders, including multi-well plates. We demonstrated multicolor fast volumetric imaging, single-molecule localization microscopy, parallel imaging of sixteen cell lines and parallel recording of cellular responses to perturbations.

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Fluorescence polarization microscopy images both the intensity and orientation of fluorescent dipoles and plays a vital role in studying molecular structures and dynamics of bio-complexes. However, current techniques remain difficult to resolve the dipole assemblies on subcellular structures and their dynamics in living cells at super-resolution level. Here we report polarized structured illumination microscopy (pSIM), which achieves super-resolution imaging of dipoles by interpreting the dipoles in spatio-angular hyperspace. We demonstrate the application of pSIM on a series of biological filamentous systems, such as cytoskeleton networks and λ-DNA, and report the dynamics of short actin sliding across a myosin-coated surface. Further, pSIM reveals the side-by-side organization of the actin ring structures in the membrane-associated periodic skeleton of hippocampal neurons and images the dipole dynamics of green fluorescent protein-labeled microtubules in live U2OS cells. pSIM applies directly to a large variety of commercial and home-built SIM systems with various imaging modality.

Antimony selenide (Sb2Se3) is an ideal photovoltaic candidate profiting from its advantageous material characteristics and superior optoelectronic properties, and has gained considerable development in recent years. However, the further device efficiency breakthrough is largely plagued by severe open‐circuit voltage (VOC) deficit under the existence of multiple defect states and detrimental recombination loss. In this work, an effective absorber layer growth engineering involved with vapor transport deposition and post‐selenization is developed to grow Sb2Se3 thin films. High‐quality Sb2Se3 with large compact crystal grains, benign [hk1] growth orientation, stoichiometric chemical composition, and suitable direct bandgap are successfully fulfilled under an optimized post‐selenization scenario. Planar Sb2Se3 thin‐film solar cells with substrate configuration of Mo/Sb2Se3/CdS/ITO/Ag are constructed. By contrast, such engineering effort can remarkably mitigate the device VOC deficit, owing to the healed detrimental defects, the suppressed interface and space‐charge region recombination, the prolonged carrier lifetime, and the enhanced charge transport. Accordingly, a minimum VOC deficit of 0.647 V contributes to a record VOC of 0.513 V, a champion device with highly interesting efficiency of 7.40% is also comparable to those state‐of‐the‐art Sb2Se3 solar cells, paving a bright avenue to broaden its scope of photovoltaic applications.