Replacing traditional inorganic material with water-miscible and low-cost material is an effective approach to solving electronic waste problems and reducing material and fabricating costs. [7,8] Currently, biodegradable resistive switching (RS) mediums, such as silk fibroin, [9] egg albumen, [10] and pectin, [11] have been adopted in transient memristors. However, the memory performance of biomaterial-based memristors, such as operating voltage, memory window, and cycling endurance, is limited by the low stability of biomaterials, [9][10][11][12][13][14] which is a major obstacle to their widespread application. Recently, several approaches have been proposed to enhance the memory performance of biomemristors, such as doped quantum dots, [15][16][17] reconstruct material structure, [18] and electrode engineering. [19] However, these approaches are relatively complex, and most modified materials have lost their degradability.In order to improve the reliability of the transient memristors, synergies between the dielectric materials, metal inclusions and conductive filaments must be optimized. [20] Fibroin exhibits excellent biocompatibility, [21] good mechanical strength, [22] tunable water-solubility, [23] and low fabricating costs. [12] Besides, as a biodegradable medium, the structure of fibroin can be adjusted by annealing, [24] light [25,26] or ion beams, [27,28] indicating that we can easily modify the properties of fibroin films. On the other hand, the doped metal particles can lower the potential barrier of fibroin films and provide metal particles to form conductive filaments. [18,[29][30][31] These unique properties lead us to investigate fibroin-Ag nanoclusters (AgNCs) as RS medium.In this letter, we report a high-performance memristor with a simple sandwich structure of Ag/fibroin-AgNCs/ITO. The fibroin films are deposited on the ITO electrode by spin-coating fibroin solution and optimized by the annealing process. Then, we inject Ag atoms into fibroin film by sputtering methods. By tuning the microstructure of fibroin films, we further discover that the device exhibits an unconventional right-angled RS behavior. Devices also show excellent storage performance, such as ultralow operating voltage (0.03-0.35 V), large memory window (≈10 7 ), and stable cycling endurance (>300). Besides, this device can be programmed by electric stimulation and Transient memristor, which can be decomposed in water after completing the designed task, has shown great potentials in data security, implantable medical devices, and eco-friendly electronics. However, the further development of transient memristors is hindered by lacking practical approaches to deal with the dilemma between stability and degradability of the device. Here, using Ag-doped fibroin film as a switching medium, an unconventional right-angled-like resistive switching behavior is observed. Based on this novel resistive switching characteristic, a high-performance transient memristor is designed and fabricated. A self-assembled Ag nanoclusters model is pr...

With the advent of the big-data era, conventional memory technologies and devices are facing enormous challenges. Resistive random access memory (RRAM) is an emerging memory technology that has aroused widespread interest for its immense potential. However, there remain some problems in resistive switching devices, such as high switching voltages, random voltages distribution, wide variation in resistance states, and poor endurance. In this work, molybdenum disulfide quantum dots are applied to resistive switching devices. The resulting devices exhibit improved performance. They have ultra-low and centralized switching voltages, uniformly distributed resistance states, good endurance, and extremely large on/off ratios. This performance optimization may derive from the convergence of electric field distribution around molybdenum disulfide quantum dots, which enhances the formation of localized conductive filaments. In this Letter, we propose an approach for improving resistive switching properties, significantly facilitating the development of data storage and related applications.

Resistive random access memory (RRAM) has attracted considerable attention due to its fast access speed and high storage density. Two different reset modes (progressive reset and abrupt reset) of RRAM have been observed previously, the former showing good uniformity but small switching window, while the latter having large switching window but poor stability and high power consumption. To overcome these limitations, an approach was proposed to control the formation and fracture of conductive filaments with interface engineering, specifically by adding a SiO2 limiting layer and MoS2 quantum dots (QDs). Modified with a SiO2/MoS2 QD hybrid structure, the Al2O3-based RRAM transforms from progressive reset mode to abrupt reset mode. The insertion not only expands the switching window by more than 100 times with excellent readability but also dramatically reduces the power consumption (<5 μW), accompanied by extremely high uniformity and reliability, which demonstrates significant potential for nonvolatile memory application. Meanwhile, the design viewpoint of combining functional layers with quantum dots provides an excellent strategy for enhancing RRAM performance in the future.

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