2D puckered materials similar to black phosphorene (BP) have tunable electronic structures, high mobility, and anisotropy, and are expected to become possible candidate channels for post‐silicon field‐effect transistors (FETs). Herein, monolayer α‐CS with puckered structure is evaluated as a promising channel material for sub‐5 nm FETs by using first principle quantum transport simulation. Monolayer α‐CS FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high‐performance (HP) and low‐power (LP) applications. The on‐state current can reach 3700 µA µm−1 for HP FET at 5 nm channel length and the on‐off ratio of LP FET is exceeding 107, both superior to those of other 2D channels like BP and InSe. The results suggest that α‐CS as a competitive channel material opens a new avenue for the future electronic technology in the upcoming Internet of Things.

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With the rapid evolution of microelectronics, the field of integrated circuits is facing unprecedented challenges. Traditional silicon-based transistors cannot maintain the advantages of high performance during the process of further ultra-scaling due to severe short-channel effects. Two-dimensional (2D) materials are potential channel materials that can replace silicon. Herein, 2D SiP is predicted to have a band gap of 1.49 eV with anisotropic electronic properties by means of first-principles calculations, which is suitable as a channel candidate of transistors. Hence, we investigate the ballistic transport properties of 2D SiP double-gate metal oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum transport simulations. Despite anisotropic electronic properties of 2D SiP, the performances of monolayer SiP MOSFETs have weak directional dependence due to high valley degeneracy. The n-MOSFETs with 10-nm gate length can fulfill the high-performance requirements of the International Roadmap for Devices and Systems 2020 Edition (IRDS 2020). However, the p-MOSFETs cannot fulfill the demands of IRDS 2020 because of heavy hole effective masses. Considering the appropriate on-current of 1292 μA/μm for SiP n-MOSFETs, 2D SiP could be utilized as a potential channel material in the next-generation FETs.